After three decades of relent- less R&D efforts from both academia and industry, silicon carbide (SiC) power device technology, driven by the various electric vehicles (xEV) and other emerging markets, are finally going mainstream [1], [2]. The SiC power device market may soon cross the US$1 billion(B) threshold in the near future while the industry is working diligently to improve device reliability and reduce cost [3]. A question naturally arises for the researchers in the field: What’s next? This article intends to explore one potential future prospect of SiC research: SiC power integrated circuits (ICs).
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