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Expert View: Avalanche and Short Circuit Robustness of Vertical GaN FET

June 20, 2022 by Dinesh Ramanathan

GaN power semiconductor devices have been the recent focus of intense development efforts due to the promising material properties of GaN for next-generation power electronics applications. For power switching and rectifying applications, the ruggedness in breakdown is a critical requirement as addition of snubber circuits reduce the performance and efficiency of the system. Lateral GaN high-electron mobility transistors (HEMTs) have been commercialized up to 900 V class recently, but they lack avalanche capabilities. Vertical GaN transistors demonstrate several advantages over lateral GaN HEMT: 1) higher breakdown voltage (BV) and current for a given chip area, 2) higher reliability, 3) easier thermal management, 4) avalanche capabilities, and 5) short-circuit robustness.

For more about this article see link below. 

https://ieeexplore.ieee.org/document/9800866

For the open access PDF link of this article please click here.

Filed Under: Past Columns / Departments Tagged With: Expert View, Open Access

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