• Skip to main content
  • Skip to secondary menu
  • Skip to primary sidebar
  • Skip to footer
  • IEEE.org
  • IEEE Xplore
  • IEEE Standards
  • IEEE Spectrum
  • IEEE PELS
  • Become a member
  • More Sites

IEEE Power Electronics Magazine

Unboxing the technology behind smart consumer electronics systems.

  • Home
  • Current Issue
  • Society News
    • Women in Engineering
  • Industry News
  • About Us
    • Contact
    • Editorial Board
  • Editor’s Desk
    • Author Information
    • Advertising
  • PELS Resources
    • Career Center
    • Publications
    • Membership
    • Standards

Expert View: Avalanche and Short Circuit Robustness of Vertical GaN FET

June 20, 2022 by Dinesh Ramanathan

GaN power semiconductor devices have been the recent focus of intense development efforts due to the promising material properties of GaN for next-generation power electronics applications. For power switching and rectifying applications, the ruggedness in breakdown is a critical requirement as addition of snubber circuits reduce the performance and efficiency of the system. Lateral GaN high-electron mobility transistors (HEMTs) have been commercialized up to 900 V class recently, but they lack avalanche capabilities. Vertical GaN transistors demonstrate several advantages over lateral GaN HEMT: 1) higher breakdown voltage (BV) and current for a given chip area, 2) higher reliability, 3) easier thermal management, 4) avalanche capabilities, and 5) short-circuit robustness.

For more about this article see link below. 

https://ieeexplore.ieee.org/document/9800866

For the open access PDF link of this article please click here.

Filed Under: Past Columns / Departments Tagged With: Expert View, Open Access

Primary Sidebar

Current Issue

Get the entire issue now

About the Magazine

IEEE Power Electronics Magazine publishes peer-reviewed articles related to power electronics and its applications which encompass the effective use of electronic components, application of control theory and circuit design techniques, and the development of analytical tools used in efficient and effective energy conversion, control, utilization, and conditioning of electric power.

The IEEE Power Electronics Magazine is limited to the field of interest of the IEEE Power Electronics Society. Topics also include publication of new trend technologies that are being pursued by industry, design practices and case studies, significant amount of state of the art surveys tutorials, and non-technical contributions: news about society activities, interviews, and historical articles.

Search

Archives

Footer

MISSION STATEMENT:

To educate, inform, and entertain our community of IEEE Power Electronics Society members on technology, events, industry news, and general topics relating to consumer electronics and to further serve and support our Members in professional career development through tutorials and raising awareness of engineering tools and technologies.

The magazine is archived in IEEE Xplore, and articles from all issues are available for download.

Home | Sitemap | Contact & Support | Accessibility | Nondiscrimination Policy | IEEE Ethics Reporting | IEEE Privacy Policy | Terms

© Copyright 2023 IEEE - All rights reserved. A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.