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Practical Realization of GaN’s Capability

June 20, 2022 by John Stevens; Tom Ribarich; Stephen Oliver

©SHUTTERSTOCK.COM//BCLASS

The system-level value of wide bandgap power semiconductors of higher efficiency, smaller size and weight, and more sustainable energy usage in our power supplies and motor drives is being demonstrated now. Gallium nitride (GaN) power FETs are replacing silicon (Si) power MOSFETs in applications from 48 V to 800 V. Silicon carbide (SiC) is replacing legacy IGBTs in applications >800 V. The previous barriers to implementing what was theoretically possible with these technologies included manufacturability, reliability, system complexity, and cost (Table 1). But over just the last few years with numerous advancements, it’s clear that those challenges have been addressed as 10’s of millions of units of GaNFast power ICs have been shipped in mass production in applications from fast mobile chargers to gaming systems to notebook computer adapters, and more.

For more about this article see link below. 

https://ieeexplore.ieee.org/document/9800848

Filed Under: Past Features Tagged With: Gallium nitride, Integrated circuits, Mass production, Motor drives, Photonic band gap, Power supplies, Reliability theory, Silicon carbide

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To educate, inform, and entertain our community of IEEE Power Electronics Society members on technology, events, industry news, and general topics relating to consumer electronics and to further serve and support our Members in professional career development through tutorials and raising awareness of engineering tools and technologies.

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