In last ten years or so, wide bandgap (WBG) devices, such as silicon carbide (SiC) and gallium nitride (GaN) power transistors, have made significant progress in reliability, performance, and cost, driving adoption of these devices in a wide range of applications. As a result, the GaN market is projected to be worth about US $ 2 billion in revenues by 2027, according to market research firm Yole Développement. In 2021, the GaN market was valued at US $ 126 million by Yole. Likewise, Yole expects SiC device market to grow beyond US $ 6 billion by 2027 at a CAGR of 34%.
From the Editor: Emerging Monolithic Bidirectional Switches Bring New Energy to WBG Devices
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