You don’t have to be a power electronics engineer to know that the last few years have been a busy time for the silicon carbide (SiC) power industry. Since Wolfspeed, based in Durham, NC, USA, announced plans to build the world’s first 200-mm device fab (opened last year in Marcy, NY, USA), many manufacturers are following suit ( Table 1 ). Adding new lines that run bigger wafers will help suppliers meet exploding demands for electric vehicles (EVs), power supplies, and other green energy applications, but it’s not just the bigger wafers that will get more devices out the door. Process control improvements and device innovations learned from silicon (Si) will also help manufacturers get the most out of the pricier SiC wafers. However, don’t write off high-voltage Si just yet—super-junction MOSFETs (SJ-MOS) and insulated-gate bipolar transistors (IGBTs) are still very relevant to the markets they serve.