Integrating machine-learning (ML) models responsible for predicting the evolution of those directly collected or implicitly derived parameters enhances the smartness of industrial systems even further. In this article, data already residing in most modern electric drives has been used to establish a data-driven thermal model of power electronics modules. The developed method … [Read more...] about Machine-Learning-Based Condition Monitoring of Power Electronics Modules in Modern Electric Drives
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Selecting the Best Magnetic Core Geometry
Selecting the best core geometry for a given application can be challenging given all the options available. For high-frequency applications using ferrite and other low loss materials, many different shapes are available from core manufacturers. For power electronics applications, frequencies are not constrained to power line frequencies leading to more complex core designs. … [Read more...] about Selecting the Best Magnetic Core Geometry
FEPPCON XI – Part II: Reliability of Power Electronic Systems
To be cost effective and safe, reliability design, test and health monitoring and management are a necessary part of power electronics implementation and its integration into energy systems. Being able to design power electronics to meet a required lifetime for a given load profile with a certain probability becomes acheiveable as we understand the physics of failure in power … [Read more...] about FEPPCON XI – Part II: Reliability of Power Electronic Systems
FEPPCON XI—Part II: Technical Committee Scope: Road Mapping Exercise
The IEEE Power Electronics Society (PELS) currently has twelve Technical Committees (TC) covering a range of technical and application areas of power electronic systems. The number of TCs was increased from seven to twelve in 2020, reflecting the global growth in power electronics in terms of scope and application. The TCs provide a community home for power electronics … [Read more...] about FEPPCON XI—Part II: Technical Committee Scope: Road Mapping Exercise
Power Conversion Systems Enabled by SiC BiDFET Device
The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and … [Read more...] about Power Conversion Systems Enabled by SiC BiDFET Device
