The past decade has witnessed increasing migration from silicon (Si) to silicon carbide (SiC) in power electronics applications. This is due to the unique advantages of SiC over Si counterparts, like higher breakdown field, higher band gap, and higher thermal conductivity [1] , [2] . Therefore, SiC devices can operate at faster switching frequencies, higher power density, and … [Read more...] about Reliability Evaluation of SiC MOSFETs Under Realistic Power Cycling Tests
Failure analysis
Intrinsic Failure Mechanisms in GaN-on-Si Power Transistors
Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles. The goal of qualification testing is to have zero failures out of a large group of parts tested. By testing parts to the point of failure, an understanding of the amount of … [Read more...] about Intrinsic Failure Mechanisms in GaN-on-Si Power Transistors
