Field effect transistors

Enabling 99.3% Efficiency in 3.6 kW Totem-Pole PFC Using New 750 V Gen 4 SiC FETs

December 1, 2021 by Ke Zhu, Anup Bhalla, and Jonathan Dodge

This article explains how the breakthrough performance of UnitedSiC 750 V Gen 4 SiC FETs enables a simple design of highly efficient totem-pole PFC. Efficiency measurements on the developed unit will demonstrate a 99.3% efficiency rating. Insight into the losses is provided by the new UnitedSiC FET-Jet calculator on-line tool, which are shown to match the actual measurements … [Read more...] about Enabling 99.3% Efficiency in 3.6 kW Totem-Pole PFC Using New 750 V Gen 4 SiC FETs

IEEE Power Electronics Magazine publishes peer-reviewed articles related to power electronics and its applications which encompass the effective use of electronic components, application of control theory and circuit design techniques, and the development of analytical tools used in efficient and effective energy conversion, control, utilization, and conditioning of electric power.

The IEEE Power Electronics Magazine is limited to the field of interest of the IEEE Power Electronics Society. Topics also include publication of new trend technologies that are being pursued by industry, design practices and case studies, significant amount of state of the art surveys tutorials, and non-technical contributions: news about society activities, interviews, and historical articles.

Field effect transistors

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