Gallium nitride

Practical Realization of GaN’s Capability

June 20, 2022 by John Stevens; Tom Ribarich; Stephen Oliver

The system-level value of wide bandgap power semiconductors of higher efficiency, smaller size and weight, and more sustainable energy usage in our power supplies and motor drives is being demonstrated now. Gallium nitride (GaN) power FETs are replacing silicon (Si) power MOSFETs in applications from 48 V to 800 V. Silicon carbide (SiC) is replacing legacy IGBTs in applications … [Read more...] about Practical Realization of GaN’s Capability

Expert View: GaN Outperforms Silicon, Enters Mainstream

June 1, 2021 by Balu Balakrishnan

How does one define ‘main- stream’? In the case of gallium nitride (GaN) power semiconductor technology, we believe that since you can now buy a sleek, 65 W mobile charger using GaN for under $25 on Amazon, it is reasonable to assume that it has been fully accepted by the consumer markets, which—almost by definition—makes it a mainstream product. For more about this … [Read more...] about Expert View: GaN Outperforms Silicon, Enters Mainstream

IEEE Power Electronics Magazine publishes peer-reviewed articles related to power electronics and its applications which encompass the effective use of electronic components, application of control theory and circuit design techniques, and the development of analytical tools used in efficient and effective energy conversion, control, utilization, and conditioning of electric power. The IEEE Power Electronics Magazine is limited to the field of interest of the IEEE Power Electronics Society. Topics also include publication of new trend technologies that are being pursued by industry, design practices and case studies, significant amount of state of the art surveys tutorials, and non-technical contributions: news about society activities, interviews, and historical articles.

15 April 2022
Prof. Sidharth Sabyasachi, International Research Professor at the Department of Electrical Engineering, Yeungnam University, South Korea wrote to “White Hot” column author Robert V. White, “Good afternoon, today I read your article “Getting the Most From Your IEEE Membership” published in the March 2022 issue of IEEE Power Electronics Magazine. It is a very informative and encouraging article and I am feeling proud of being an IEEE and PELS member. Thanks a lot again and I hope one day I will meet in person.”

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The Incredible Shrinking Motor Drive: Accelerating the Transition to Integrated Motor Drives

A technological revolution is coming in the electric vehicle industry.

A technology revolution is unfolding around us as every major mode of transportation is in some stage of electrification, whether on land, sea, or in the air. All of these transportation modes depend on electric machines that play critical roles in both propulsion systems as well as in a wide variety of accessory equipment. Fuel economy and reduced emissions of greenhouse gases and other pollutants are major driving forces for electrified transportation. Despite the significant differences between these varied transportation modes, they all share strong motivations to make their electric machines and adjustable-speed drives smaller, lighter, and more efficient. An excellent example of this trend for the power electronic drives is provided by comparing the drive units in the Tesla S (2012) and Tesla 3 (2017). As shown in the side-by-side views provided in Figure 1, the drive unit shrank in size from an enclosure that matched the size of its main traction motor to a much smaller unit that, at first sight, appears to be a non-descript end-bell attached to one end of the motor. Rather than focusing here on how this impressive reduction in mass and volume was achieved (addressed later in this article), the key point here is that similar technology trends are under way in many of the other transportation modes as well, making electrified transportation increasingly appealing and competitive in the process.

Practical Realization of GaN’s Capability

Expert View: GaN Outperforms Silicon, Enters Mainstream

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Gallium nitride

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