Lifetime estimation

The past decade has witnessed increasing migration from silicon (Si) to silicon carbide (SiC) in power electronics applications. This is due to the unique advantages of SiC over Si counterparts, like higher breakdown field, higher band gap, and higher thermal conductivity [1] , [2] . Therefore, SiC devices can operate at faster switching frequencies, higher power density, and … [Read more...] about Reliability Evaluation of SiC MOSFETs Under Realistic Power Cycling Tests