The past decade has witnessed increasing migration from silicon (Si) to silicon carbide (SiC) in power electronics applications. This is due to the unique advantages of SiC over Si counterparts, like higher breakdown field, higher band gap, and higher thermal conductivity [1] , [2] . Therefore, SiC devices can operate at faster switching frequencies, higher power density, and … [Read more...] about Reliability Evaluation of SiC MOSFETs Under Realistic Power Cycling Tests
MOSFET
Expert View: GaN Outperforms Silicon, Enters Mainstream
How does one define ‘main- stream’? In the case of gallium nitride (GaN) power semiconductor technology, we believe that since you can now buy a sleek, 65 W mobile charger using GaN for under $25 on Amazon, it is reasonable to assume that it has been fully accepted by the consumer markets, which—almost by definition—makes it a mainstream product. For more about this … [Read more...] about Expert View: GaN Outperforms Silicon, Enters Mainstream
Happenings: SiC Research Beyond Power MOSFET: What’s Next?
After three decades of relent- less R&D efforts from both academia and industry, silicon carbide (SiC) power device technology, driven by the various electric vehicles (xEV) and other emerging markets, are finally going mainstream [1], [2]. The SiC power device market may soon cross the US$1 billion(B) threshold in the near future while the industry is working diligently to … [Read more...] about Happenings: SiC Research Beyond Power MOSFET: What’s Next?
Assessing Short-Circuit Robustness of 1200 V SiC MOSFETs: Using Deep Structural and Physical Analysis
Silicon carbide (SiC) transistors are known for their high breakdown voltage capabilities and ability to operate at much higher temperatures relative to silicon (Si) power semiconductors. The first commercial SiC MOSFETs were introduced in 2010 [1], [2]. Currently, third generation devices are in production and leading manufacturers will soon release fourth generation products … [Read more...] about Assessing Short-Circuit Robustness of 1200 V SiC MOSFETs: Using Deep Structural and Physical Analysis
A Highly Scalable, Modular Test Bench Architecture for Large-Scale DC Power Cycling of SiC MOSFETs: Towards Data Enabled Reliability
Silicon carbide (SiC) power MOSFETs have superior conduction, switching and thermal properties compared to silicon (Si) MOSFETs and IGBTs [1]. However, unlike Si devices, whose reliability is well understood from decades of research and field data, SiC device technology is relatively nascent and has only recently started witnessing wide scale deployment. This reliability … [Read more...] about A Highly Scalable, Modular Test Bench Architecture for Large-Scale DC Power Cycling of SiC MOSFETs: Towards Data Enabled Reliability
