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MOSFET

Expert View: GaN Outperforms Silicon, Enters Mainstream

June 1, 2021 by Balu Balakrishnan

Photo of Balu Balakrishnan

How does one define ‘main- stream’? In the case of gallium nitride (GaN) power semiconductor technology, we believe that since you can now buy a sleek, 65 W mobile charger using GaN for under $25 on Amazon, it is reasonable to assume that it has been fully accepted by the consumer markets, which—almost by definition—makes it a mainstream product. For more about this … [Read more...] about Expert View: GaN Outperforms Silicon, Enters Mainstream

Happenings: SiC Research Beyond Power MOSFET: What’s Next?

June 1, 2021 by Z. John Shen

Photo of Z. John Shen

After three decades of relent- less R&D efforts from both academia and industry, silicon carbide (SiC) power device technology, driven by the various electric vehicles (xEV) and other emerging markets, are finally going mainstream [1], [2]. The SiC power device market may soon cross the US$1 billion(B) threshold in the near future while the industry is working diligently to … [Read more...] about Happenings: SiC Research Beyond Power MOSFET: What’s Next?

Assessing Short-Circuit Robustness of 1200 V SiC MOSFETs: Using Deep Structural and Physical Analysis

June 1, 2021 by Alberto O. Adan, Yusuke Takagi, Seiji Takeuchi, Lajos (Louis) Burgyan, and Yuji Kakizaki

Image of a chip on a blue background.

Silicon carbide (SiC) transistors are known for their high breakdown voltage capabilities and ability to operate at much higher temperatures relative to silicon (Si) power semiconductors. The first commercial SiC MOSFETs were introduced in 2010 [1], [2]. Currently, third generation devices are in production and leading manufacturers will soon release fourth generation products … [Read more...] about Assessing Short-Circuit Robustness of 1200 V SiC MOSFETs: Using Deep Structural and Physical Analysis

A Highly Scalable, Modular Test Bench Architecture for Large-Scale DC Power Cycling of SiC MOSFETs: Towards Data Enabled Reliability

March 1, 2021 by Bhanu Teja Vankayalapati, Fei Yang, Shi Pu, Masoud Farhadi, and Bilal Akin

Image of people working.

Silicon carbide (SiC) power MOSFETs have superior conduction, switching and thermal properties compared to silicon (Si) MOSFETs and IGBTs [1]. However, unlike Si devices, whose reliability is well understood from decades of research and field data, SiC device technology is relatively nascent and has only recently started witnessing wide scale deployment. This reliability … [Read more...] about A Highly Scalable, Modular Test Bench Architecture for Large-Scale DC Power Cycling of SiC MOSFETs: Towards Data Enabled Reliability

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About the Magazine

IEEE Power Electronics Magazine publishes peer-reviewed articles related to power electronics and its applications which encompass the effective use of electronic components, application of control theory and circuit design techniques, and the development of analytical tools used in efficient and effective energy conversion, control, utilization, and conditioning of electric power.

The IEEE Power Electronics Magazine is limited to the field of interest of the IEEE Power Electronics Society. Topics also include publication of new trend technologies that are being pursued by industry, design practices and case studies, significant amount of state of the art surveys tutorials, and non-technical contributions: news about society activities, interviews, and historical articles.

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To educate, inform, and entertain our community of IEEE Power Electronics Society members on technology, events, industry news, and general topics relating to consumer electronics and to further serve and support our Members in professional career development through tutorials and raising awareness of engineering tools and technologies.

The magazine is archived in IEEE Xplore, and articles from all issues are available for download.

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