MOSFET

Expert View: GaN Outperforms Silicon, Enters Mainstream

June 1, 2021 by Balu Balakrishnan

How does one define ‘main- stream’? In the case of gallium nitride (GaN) power semiconductor technology, we believe that since you can now buy a sleek, 65 W mobile charger using GaN for under $25 on Amazon, it is reasonable to assume that it has been fully accepted by the consumer markets, which—almost by definition—makes it a mainstream product. For more about this … [Read more...] about Expert View: GaN Outperforms Silicon, Enters Mainstream

Happenings: SiC Research Beyond Power MOSFET: What’s Next?

June 1, 2021 by Z. John Shen

After three decades of relent- less R&D efforts from both academia and industry, silicon carbide (SiC) power device technology, driven by the various electric vehicles (xEV) and other emerging markets, are finally going mainstream [1], [2]. The SiC power device market may soon cross the US$1 billion(B) threshold in the near future while the industry is working diligently to … [Read more...] about Happenings: SiC Research Beyond Power MOSFET: What’s Next?

Assessing Short-Circuit Robustness of 1200 V SiC MOSFETs: Using Deep Structural and Physical Analysis

June 1, 2021 by Alberto O. Adan, Yusuke Takagi, Seiji Takeuchi, Lajos (Louis) Burgyan, and Yuji Kakizaki

Silicon carbide (SiC) transistors are known for their high breakdown voltage capabilities and ability to operate at much higher temperatures relative to silicon (Si) power semiconductors. The first commercial SiC MOSFETs were introduced in 2010 [1], [2]. Currently, third generation devices are in production and leading manufacturers will soon release fourth generation products … [Read more...] about Assessing Short-Circuit Robustness of 1200 V SiC MOSFETs: Using Deep Structural and Physical Analysis

A Highly Scalable, Modular Test Bench Architecture for Large-Scale DC Power Cycling of SiC MOSFETs: Towards Data Enabled Reliability

March 1, 2021 by Bhanu Teja Vankayalapati, Fei Yang, Shi Pu, Masoud Farhadi, and Bilal Akin

Silicon carbide (SiC) power MOSFETs have superior conduction, switching and thermal properties compared to silicon (Si) MOSFETs and IGBTs [1]. However, unlike Si devices, whose reliability is well understood from decades of research and field data, SiC device technology is relatively nascent and has only recently started witnessing wide scale deployment. This reliability … [Read more...] about A Highly Scalable, Modular Test Bench Architecture for Large-Scale DC Power Cycling of SiC MOSFETs: Towards Data Enabled Reliability

A technology revolution is unfolding around us as every major mode of transportation is in some stage of electrification, whether on land, sea, or in the air. All of these transportation modes depend on electric machines that play critical roles in both propulsion systems as well as in a wide variety of accessory equipment. Fuel economy and reduced emissions of greenhouse gases and other pollutants are major driving forces for electrified transportation. Despite the significant differences between these varied transportation modes, they all share strong motivations to make their electric machines and adjustable-speed drives smaller, lighter, and more efficient. An excellent example of this trend for the power electronic drives is provided by comparing the drive units in the Tesla S (2012) and Tesla 3 (2017). As shown in the side-by-side views provided in Figure 1, the drive unit shrank in size from an enclosure that matched the size of its main traction motor to a much smaller unit that, at first sight, appears to be a non-descript end-bell attached to one end of the motor. Rather than focusing here on how this impressive reduction in mass and volume was achieved (addressed later in this article), the key point here is that similar technology trends are under way in many of the other transportation modes as well, making electrified transportation increasingly appealing and competitive in the process.