Photonic band gap

Wide Bandgap Semiconductor-Based Power Electronics for Aviation

October 14, 2022 by Fei Fred Wang

There is a growing trend in aircraft electrification, which can reduce green-house gas emissions, reduce audible noise, reduce maintenance needs, lower cost, and improve safety. Moving from mechanical, pneumatic, and hydraulic power to electric power requires architecture changes, more electric power, and improvements in electric power generation, distribution, and conversion. … [Read more...] about Wide Bandgap Semiconductor-Based Power Electronics for Aviation

Practical Realization of GaN’s Capability

June 20, 2022 by John Stevens; Tom Ribarich; Stephen Oliver

The system-level value of wide bandgap power semiconductors of higher efficiency, smaller size and weight, and more sustainable energy usage in our power supplies and motor drives is being demonstrated now. Gallium nitride (GaN) power FETs are replacing silicon (Si) power MOSFETs in applications from 48 V to 800 V. Silicon carbide (SiC) is replacing legacy IGBTs in applications … [Read more...] about Practical Realization of GaN’s Capability

IEEE Power Electronics Magazine publishes peer-reviewed articles related to power electronics and its applications which encompass the effective use of electronic components, application of control theory and circuit design techniques, and the development of analytical tools used in efficient and effective energy conversion, control, utilization, and conditioning of electric power.

The IEEE Power Electronics Magazine is limited to the field of interest of the IEEE Power Electronics Society. Topics also include publication of new trend technologies that are being pursued by industry, design practices and case studies, significant amount of state of the art surveys tutorials, and non-technical contributions: news about society activities, interviews, and historical articles.

Photonic band gap

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