Reliability theory

Practical Realization of GaN’s Capability

June 20, 2022 by John Stevens; Tom Ribarich; Stephen Oliver

The system-level value of wide bandgap power semiconductors of higher efficiency, smaller size and weight, and more sustainable energy usage in our power supplies and motor drives is being demonstrated now. Gallium nitride (GaN) power FETs are replacing silicon (Si) power MOSFETs in applications from 48 V to 800 V. Silicon carbide (SiC) is replacing legacy IGBTs in applications … [Read more...] about Practical Realization of GaN’s Capability

IEEE Power Electronics Magazine publishes peer-reviewed articles related to power electronics and its applications which encompass the effective use of electronic components, application of control theory and circuit design techniques, and the development of analytical tools used in efficient and effective energy conversion, control, utilization, and conditioning of electric power.

The IEEE Power Electronics Magazine is limited to the field of interest of the IEEE Power Electronics Society. Topics also include publication of new trend technologies that are being pursued by industry, design practices and case studies, significant amount of state of the art surveys tutorials, and non-technical contributions: news about society activities, interviews, and historical articles.

Reliability theory

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