The system-level value of wide bandgap power semiconductors of higher efficiency, smaller size and weight, and more sustainable energy usage in our power supplies and motor drives is being demonstrated now. Gallium nitride (GaN) power FETs are replacing silicon (Si) power MOSFETs in applications from 48 V to 800 V. Silicon carbide (SiC) is replacing legacy IGBTs in applications … [Read more...] about Practical Realization of GaN’s Capability