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Robustness

Assessing Short-Circuit Robustness of 1200 V SiC MOSFETs: Using Deep Structural and Physical Analysis

June 1, 2021 by Alberto O. Adan, Yusuke Takagi, Seiji Takeuchi, Lajos (Louis) Burgyan, and Yuji Kakizaki

Image of a chip on a blue background.

Silicon carbide (SiC) transistors are known for their high breakdown voltage capabilities and ability to operate at much higher temperatures relative to silicon (Si) power semiconductors. The first commercial SiC MOSFETs were introduced in 2010 [1], [2]. Currently, third generation devices are in production and leading manufacturers will soon release fourth generation products … [Read more...] about Assessing Short-Circuit Robustness of 1200 V SiC MOSFETs: Using Deep Structural and Physical Analysis

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IEEE Power Electronics Magazine publishes peer-reviewed articles related to power electronics and its applications which encompass the effective use of electronic components, application of control theory and circuit design techniques, and the development of analytical tools used in efficient and effective energy conversion, control, utilization, and conditioning of electric power.

The IEEE Power Electronics Magazine is limited to the field of interest of the IEEE Power Electronics Society. Topics also include publication of new trend technologies that are being pursued by industry, design practices and case studies, significant amount of state of the art surveys tutorials, and non-technical contributions: news about society activities, interviews, and historical articles.

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To educate, inform, and entertain our community of IEEE Power Electronics Society members on technology, events, industry news, and general topics relating to consumer electronics and to further serve and support our Members in professional career development through tutorials and raising awareness of engineering tools and technologies.

The magazine is archived in IEEE Xplore, and articles from all issues are available for download.

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