This article explains how the breakthrough performance of UnitedSiC 750 V Gen 4 SiC FETs enables a simple design of highly efficient totem-pole PFC. Efficiency measurements on the developed unit will demonstrate a 99.3% efficiency rating. Insight into the losses is provided by the new UnitedSiC FET-Jet calculator on-line tool, which are shown to match the actual measurements … [Read more...] about Enabling 99.3% Efficiency in 3.6 kW Totem-Pole PFC Using New 750 V Gen 4 SiC FETs
After three decades of relent- less R&D efforts from both academia and industry, silicon carbide (SiC) power device technology, driven by the various electric vehicles (xEV) and other emerging markets, are finally going mainstream , . The SiC power device market may soon cross the US$1 billion(B) threshold in the near future while the industry is working diligently to … [Read more...] about Happenings: SiC Research Beyond Power MOSFET: What’s Next?
Silicon carbide (SiC) transistors are known for their high breakdown voltage capabilities and ability to operate at much higher temperatures relative to silicon (Si) power semiconductors. The first commercial SiC MOSFETs were introduced in 2010 , . Currently, third generation devices are in production and leading manufacturers will soon release fourth generation products … [Read more...] about Assessing Short-Circuit Robustness of 1200 V SiC MOSFETs: Using Deep Structural and Physical Analysis
Silicon carbide (SiC) power MOSFETs have superior conduction, switching and thermal properties compared to silicon (Si) MOSFETs and IGBTs . However, unlike Si devices, whose reliability is well understood from decades of research and field data, SiC device technology is relatively nascent and has only recently started witnessing wide scale deployment. This reliability … [Read more...] about A Highly Scalable, Modular Test Bench Architecture for Large-Scale DC Power Cycling of SiC MOSFETs: Towards Data Enabled Reliability