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Unboxing the technology behind smart consumer electronics systems.

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Silicon carbide

Power Conversion Systems Enabled by SiC BiDFET Device

March 15, 2023 by Subhashish Bhattacharya

The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and … [Read more...] about Power Conversion Systems Enabled by SiC BiDFET Device

Monolithic Bidirectional Power Transistors

March 15, 2023 by Jonas Huber

Today’s global megatrends—loosely defined as long-term trends that shape societies and economies worldwide—include, e.g., the transition to a fully renewable energy supply and the establishment of evermore stringent efficiency requirements for industry. Similarly, the trend of rapid global urbanization creates a need for sustainable mobility. The digital disruption contributes … [Read more...] about Monolithic Bidirectional Power Transistors

Practical Realization of GaN’s Capability

June 20, 2022 by John Stevens; Tom Ribarich; Stephen Oliver

The system-level value of wide bandgap power semiconductors of higher efficiency, smaller size and weight, and more sustainable energy usage in our power supplies and motor drives is being demonstrated now. Gallium nitride (GaN) power FETs are replacing silicon (Si) power MOSFETs in applications from 48 V to 800 V. Silicon carbide (SiC) is replacing legacy IGBTs in applications … [Read more...] about Practical Realization of GaN’s Capability

Enabling 99.3% Efficiency in 3.6 kW Totem-Pole PFC Using New 750 V Gen 4 SiC FETs

December 1, 2021 by Ke Zhu, Anup Bhalla, and Jonathan Dodge

Image of a person.

This article explains how the breakthrough performance of UnitedSiC 750 V Gen 4 SiC FETs enables a simple design of highly efficient totem-pole PFC. Efficiency measurements on the developed unit will demonstrate a 99.3% efficiency rating. Insight into the losses is provided by the new UnitedSiC FET-Jet calculator on-line tool, which are shown to match the actual measurements … [Read more...] about Enabling 99.3% Efficiency in 3.6 kW Totem-Pole PFC Using New 750 V Gen 4 SiC FETs

Happenings: SiC Research Beyond Power MOSFET: What’s Next?

June 1, 2021 by Z. John Shen

Photo of Z. John Shen

After three decades of relent- less R&D efforts from both academia and industry, silicon carbide (SiC) power device technology, driven by the various electric vehicles (xEV) and other emerging markets, are finally going mainstream [1], [2]. The SiC power device market may soon cross the US$1 billion(B) threshold in the near future while the industry is working diligently to … [Read more...] about Happenings: SiC Research Beyond Power MOSFET: What’s Next?

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IEEE Power Electronics Magazine publishes peer-reviewed articles related to power electronics and its applications which encompass the effective use of electronic components, application of control theory and circuit design techniques, and the development of analytical tools used in efficient and effective energy conversion, control, utilization, and conditioning of electric power.

The IEEE Power Electronics Magazine is limited to the field of interest of the IEEE Power Electronics Society. Topics also include publication of new trend technologies that are being pursued by industry, design practices and case studies, significant amount of state of the art surveys tutorials, and non-technical contributions: news about society activities, interviews, and historical articles.

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To educate, inform, and entertain our community of IEEE Power Electronics Society members on technology, events, industry news, and general topics relating to consumer electronics and to further serve and support our Members in professional career development through tutorials and raising awareness of engineering tools and technologies.

The magazine is archived in IEEE Xplore, and articles from all issues are available for download.

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