The past decade has witnessed increasing migration from silicon (Si) to silicon carbide (SiC) in power electronics applications. This is due to the unique advantages of SiC over Si counterparts, like higher breakdown field, higher band gap, and higher thermal conductivity [1] , [2] . Therefore, SiC devices can operate at faster switching frequencies, higher power density, and … [Read more...] about Reliability Evaluation of SiC MOSFETs Under Realistic Power Cycling Tests
Silicon carbide
Power Conversion Systems Enabled by SiC BiDFET Device
The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and … [Read more...] about Power Conversion Systems Enabled by SiC BiDFET Device
Monolithic Bidirectional Power Transistors
Today’s global megatrends—loosely defined as long-term trends that shape societies and economies worldwide—include, e.g., the transition to a fully renewable energy supply and the establishment of evermore stringent efficiency requirements for industry. Similarly, the trend of rapid global urbanization creates a need for sustainable mobility. The digital disruption contributes … [Read more...] about Monolithic Bidirectional Power Transistors
Practical Realization of GaN’s Capability
The system-level value of wide bandgap power semiconductors of higher efficiency, smaller size and weight, and more sustainable energy usage in our power supplies and motor drives is being demonstrated now. Gallium nitride (GaN) power FETs are replacing silicon (Si) power MOSFETs in applications from 48 V to 800 V. Silicon carbide (SiC) is replacing legacy IGBTs in applications … [Read more...] about Practical Realization of GaN’s Capability
Enabling 99.3% Efficiency in 3.6 kW Totem-Pole PFC Using New 750 V Gen 4 SiC FETs
This article explains how the breakthrough performance of UnitedSiC 750 V Gen 4 SiC FETs enables a simple design of highly efficient totem-pole PFC. Efficiency measurements on the developed unit will demonstrate a 99.3% efficiency rating. Insight into the losses is provided by the new UnitedSiC FET-Jet calculator on-line tool, which are shown to match the actual measurements … [Read more...] about Enabling 99.3% Efficiency in 3.6 kW Totem-Pole PFC Using New 750 V Gen 4 SiC FETs
