The past decade has witnessed increasing migration from silicon (Si) to silicon carbide (SiC) in power electronics applications. This is due to the unique advantages of SiC over Si counterparts, like higher breakdown field, higher band gap, and higher thermal conductivity [1] , [2] . Therefore, SiC devices can operate at faster switching frequencies, higher power density, and … [Read more...] about Reliability Evaluation of SiC MOSFETs Under Realistic Power Cycling Tests
Silicon
Heterogeneous Integration: A Promising Technology to Future Integrated Power Conversion Electronics
Since its renaissance, heterogeneous integration (HI) where unique merits of different silicon or III-V technologies, has been widely explored in many power electronics and achieved remark- able success. It is known that the success of power conversion electronics is mostly attributed to the low-power, fast-response, and accurate mixed-signal control circuitry and the low-loss, … [Read more...] about Heterogeneous Integration: A Promising Technology to Future Integrated Power Conversion Electronics
Reliability of Silicon Battery Technology and Power Electronics Based Energy Conversion
Continuous improvements in battery technology has paved the way for adoption in growing number of applications. However, the state-of-the-art graphite anodes remain sensitive to heat dissipation during fast charging or short circuits, and possibly causing inflammation of the battery. This is a limitation for safety critical applications and prevents ultra-high charging rates. … [Read more...] about Reliability of Silicon Battery Technology and Power Electronics Based Energy Conversion
Assessing Short-Circuit Robustness of 1200 V SiC MOSFETs: Using Deep Structural and Physical Analysis
Silicon carbide (SiC) transistors are known for their high breakdown voltage capabilities and ability to operate at much higher temperatures relative to silicon (Si) power semiconductors. The first commercial SiC MOSFETs were introduced in 2010 [1], [2]. Currently, third generation devices are in production and leading manufacturers will soon release fourth generation products … [Read more...] about Assessing Short-Circuit Robustness of 1200 V SiC MOSFETs: Using Deep Structural and Physical Analysis
A Highly Scalable, Modular Test Bench Architecture for Large-Scale DC Power Cycling of SiC MOSFETs: Towards Data Enabled Reliability
Silicon carbide (SiC) power MOSFETs have superior conduction, switching and thermal properties compared to silicon (Si) MOSFETs and IGBTs [1]. However, unlike Si devices, whose reliability is well understood from decades of research and field data, SiC device technology is relatively nascent and has only recently started witnessing wide scale deployment. This reliability … [Read more...] about A Highly Scalable, Modular Test Bench Architecture for Large-Scale DC Power Cycling of SiC MOSFETs: Towards Data Enabled Reliability
