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Silicon

Heterogeneous Integration: A Promising Technology to Future Integrated Power Conversion Electronics

September 1, 2021 by Fanyi Meng, Chenfei Wang, Ziheng Liu, Kaixue Ma, Don Disney, and Kiat Seng Yeo

Circle split in half with a computer parts showing.

Since its renaissance, heterogeneous integration (HI) where unique merits of different silicon or III-V technologies, has been widely explored in many power electronics and achieved remark- able success. It is known that the success of power conversion electronics is mostly attributed to the low-power, fast-response, and accurate mixed-signal control circuitry and the low-loss, … [Read more...] about Heterogeneous Integration: A Promising Technology to Future Integrated Power Conversion Electronics

Reliability of Silicon Battery Technology and Power Electronics Based Energy Conversion

June 1, 2021 by Sandra Hansen, Frederik Hahn, Helge Krüger, Felix Hoffmann, Markus Andresen, Rainer Adelung, and Marco Liserre

Image of purple circles with a golden border.

Continuous improvements in battery technology has paved the way for adoption in growing number of applications. However, the state-of-the-art graphite anodes remain sensitive to heat dissipation during fast charging or short circuits, and possibly causing inflammation of the battery. This is a limitation for safety critical applications and prevents ultra-high charging rates. … [Read more...] about Reliability of Silicon Battery Technology and Power Electronics Based Energy Conversion

Assessing Short-Circuit Robustness of 1200 V SiC MOSFETs: Using Deep Structural and Physical Analysis

June 1, 2021 by Alberto O. Adan, Yusuke Takagi, Seiji Takeuchi, Lajos (Louis) Burgyan, and Yuji Kakizaki

Image of a chip on a blue background.

Silicon carbide (SiC) transistors are known for their high breakdown voltage capabilities and ability to operate at much higher temperatures relative to silicon (Si) power semiconductors. The first commercial SiC MOSFETs were introduced in 2010 [1], [2]. Currently, third generation devices are in production and leading manufacturers will soon release fourth generation products … [Read more...] about Assessing Short-Circuit Robustness of 1200 V SiC MOSFETs: Using Deep Structural and Physical Analysis

A Highly Scalable, Modular Test Bench Architecture for Large-Scale DC Power Cycling of SiC MOSFETs: Towards Data Enabled Reliability

March 1, 2021 by Bhanu Teja Vankayalapati, Fei Yang, Shi Pu, Masoud Farhadi, and Bilal Akin

Image of people working.

Silicon carbide (SiC) power MOSFETs have superior conduction, switching and thermal properties compared to silicon (Si) MOSFETs and IGBTs [1]. However, unlike Si devices, whose reliability is well understood from decades of research and field data, SiC device technology is relatively nascent and has only recently started witnessing wide scale deployment. This reliability … [Read more...] about A Highly Scalable, Modular Test Bench Architecture for Large-Scale DC Power Cycling of SiC MOSFETs: Towards Data Enabled Reliability

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To educate, inform, and entertain our community of IEEE Power Electronics Society members on technology, events, industry news, and general topics relating to consumer electronics and to further serve and support our Members in professional career development through tutorials and raising awareness of engineering tools and technologies.

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