Thermal conductivity

Silicon carbide (SiC) power MOSFETs have superior conduction, switching and thermal properties compared to silicon (Si) MOSFETs and IGBTs [1]. However, unlike Si devices, whose reliability is well understood from decades of research and field data, SiC device technology is relatively nascent and has only recently started witnessing wide scale deployment. This reliability … [Read more...] about A Highly Scalable, Modular Test Bench Architecture for Large-Scale DC Power Cycling of SiC MOSFETs: Towards Data Enabled Reliability